1 item symbol ratings unit remarks drain-source voltage v ds 600 v dsx 600 continuous drain current i d 43 pulsed drain current i d(puls] 172 gate-source voltage v gs 30 non-repetitive i as 43 maximum avalanche current repetitive or i ar 21.5 maximum avalanche current non-repetitive e as 808.9 maximum avalanche energy maximum drain-source dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt 5 max. power dissipation p d 2.50 600 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2SK3681-01 fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators dc-dc converters ups (uninterruptible power supply) maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =600v v gs =0v v ds =480v v gs =0v v gs =30v i d =26a v gs =10v i d =21.5a v ds =25v v cc =300v i d =21.5a v gs =10v r gs =10 ? min. typ. max. units v v a na ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 0.208 50.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mhz v cc =300v i d =43a v gs =10v l=802 h t ch =25c i f =43a v gs =0v t ch =25c i f =43a v gs =0v -di/dt=100a/s t ch =25c v v a a v a a mj kv/s kv/s w c c 600 3.0 5.0 25 250 10 100 0.12 0.16 15 30 5360 8040 680 1020 40 60 80 120 87 131 190 285 44 66 112 168 34 51 40 60 43 1.00 1.50 0.98 22.0 -55 to +150 outline drawings [mm] equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series 200401 < = v gs =-30v tch=25c *1 tch 150c *1 l=802h v cc =60v *2 vds 600v *3 ta=25c tc=25c < = *1 see to avalanche current graph *2 see to avalanche energy graph *3 i f -i d , -di/dt=50a/s, v cc bv dss , tch 150c < = < = < = 11.60.2
2 characteristics 2SK3681-01 fuji power mosfet 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 800 allowable power dissipation pd=f(tc) pd [w] tc [ c] 04812162024 0 10 20 30 40 50 60 70 80 90 100 110 120 7.0v 20v 10v 8v 6.5v vgs=6.0v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 c 0 20406080100 0.0 0.1 0.2 0.3 0.4 rds(on) [ ? ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 8v 7.5v 6.5v vgs=6v -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=26a,vgs=10v
3 2SK3681-01 fuji power mosfet -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250 a vgs(th) [v] tch [ c] 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 qg [nc] typical gate charge characteristics vgs=f(qg):id=43a,tch=25 c vgs [v] 480v 300v vcc= 120v 10 0 10 1 10 2 10 3 10 1 10 2 10 3 10 4 10 5 c [pf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0.1 1 10 100 1000 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 s pulse test,tch=25 c 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id t=f(id):vcc=300v,vgs=10v,rg=10 ? td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 repetitive non-repetitive (single pulse) i av [a] starting tch [ c] maximum avalanche energy vs. starting tch i(av)=f(starting tch):vcc=60v
4 2SK3681-01 fuji power mosfet http://www.fujielectric.co.jp/denshi/scd/ 0 255075100125150 0 500 1000 1500 2000 2500 i as =18a i as =26a i as =43a eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=60v,i(av)<=43a 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=60v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maxmum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [ c/w] t [sec]
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